Growth of SiO2nanowire by Vapor Phase Evaporation
نویسندگان
چکیده
منابع مشابه
Growth of GaN nanotubes by halide vapor phase epitaxy.
We have investigated low temperature growth of GaN nanostructures using halide vapor phase epitaxy on c-oriented Al(2)O(3) and Au coated Al(2)O(3) substrates. Depending on the III/V ratio and the growth temperature, the shape and density of the structures could be controlled. By increasing the GaCl partial pressure, the structure changed from dot-like to nanotubes. The nanotubes, which could be...
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بیمه گران همیشه بابت خسارات بیمه نامه های تحت پوشش خود نگران بوده و روش هایی را جستجو می کنند که بتوانند داده های خسارات گذشته را با هدف اتخاذ یک تصمیم بهینه مدل بندی نمایند. در این پژوهش توزیع های فیزتایپ در مدل بندی داده های خسارات معرفی شده که شامل استنباط آماری مربوطه و استفاده از الگوریتم em در برآورد پارامترهای توزیع است. در پایان امکان استفاده از این توزیع در مدل بندی داده های گروه بندی ...
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We have studied the vapor-phase growth of a mixture of two differently sized Lennard-Jones particles as a function of relative atomic size and substrate temperature, and we investigated what influence the substrate has on the growth. As a function of relative atomic size there is an abrupt change from well-layered crystalhne growth to a nonlayered disordered growth. This transition is not affec...
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ژورنال
عنوان ژورنال: Korean Journal of Materials Research
سال: 2004
ISSN: 1225-0562
DOI: 10.3740/mrsk.2004.14.7.482